ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In single crystal silicon (SCSi) MEMS devices, crystalline imperfection is recognized to favorfailure. A DRIE etched SCSi structure was built to study the crystal strain profile in dependence ofthe SCSi deformation by applying a mechanical force. High resolution X-ray diffraction methodssuch as the rocking curve method and reciprocal space mapping were used to determine the strain aswell as the defect concentration in the crystal. The investigations also include the numericalsimulation of deformations
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/19/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.584-586.518.pdf
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