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  • 1
    Electronic Resource
    Electronic Resource
    Reduction of defects in laser-induced crystallized and amorphized silicon films using plasma hydrogenation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7377-7383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250 °C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm−3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm−3 eV−1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357962
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  • 2
    Electronic Resource
    Electronic Resource
    Orientational memory site in hydrogenation disproportionation desorption recombination process of anisotropic Nd2Fe14B-based magnets (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7170-7174 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To clarify the orientational memory site in the hydrogen disproportionation desorption recombination process of Nd2Fe14B-based anisotropic magnets, high resolution transmission electron microscopy (HRTEM) characterization of hydrogen disproportionated structure of Nd13.0Fe67.9Co11.0Ga1.0Zr0.1B7.0 has been performed. In particular, crystallographic orientations of disproportionated products relative to that of parent or original Nd2Fe14B have been carefully analyzed using partially disproportionated samples. No apparent orientational coherency exists between the disproportionated products of α-Fe, Fe2B, and NdH2 and the parent Nd2Fe14B. However, nanoscale Nd2Fe14B particles of 10 to 100 nm in diameter have been detected by HRTEM to be densely present within the disproportionated mixture. Lattice fringe observation has also revealed that the crystallographic axes of the Nd2Fe14B particles are nearly parallel to those of the original Nd2Fe14B. It is thus suggested that these Nd2Fe14B particles be the orientational memory site upon the recombination, which recovers the original orientation leading to the anisotropy formation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365315
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlattices (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1124-1127 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of In0.2Al0.8As buffer layers on the lattice distortions of the strained layer superlattices (In0.2Al0.8As)100 A(ring) (GaAs)100 A(ring) (30 periods) have been investigated by x-ray diffraction. We have found that for the buffer layer thickness hbuff≥5000 A(ring), the In0.2Al0.8As layers of both buffer layers and superlattices are in a strain-free state, while GaAs layers of superlattices show large tetragonal lattice distortions. This fact implies that for hbuff≥5000 A(ring), buffer layers dominate the strain fields of superlattices, i.e., buffer layers play the role of an "effective substrate.'' Lattice distortions in buffer layers and superlattices against buffer layer thickness are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339831
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  • 4
    Electronic Resource
    Electronic Resource
    Finite-size effects on Raman scattering from GaAs-AlAs superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 3289-3292 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated finite-size (total number of periods) effects on Raman scattering by longitudinal acoustic (LA) and longitudinal optic (LO) phonon modes in GaAs-AlAs superlattices. Every superlattice has the same period (10-monolayer GaAs and 10-monolayer AlAs), while the total number of periods ranges from 3 to 100 periods. Even in the superlattice with three periods, folded LA phonon modes are induced by the superlattice period. Raman linewidths of folded LA phonon modes increase as the total number of periods decreases. The Raman linewidth broadening becomes remarkable below 20 periods. The dependence of linewidth broadening on the total number of periods results from the relaxation of the Raman selection rule for phonon wave vectors induced by the finiteness of superlattices. On the other hand, for LO phonon modes the finite size does not affect Raman line shapes; this originates in the confinement of LO phonon modes in individual layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337720
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of InAs/In1−xAlxAs strained-layer superlattices on GaAs (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 2057-2061 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs/In1−xAlxAs strained-layer superlattices (SLSs) have been grown by molecular-beam epitaxy on highly mismatched (001) GaAs substrates. High-quality strained thin films were obtained by growing AlSb and In1−yAlyAs buffer layers between substrates and SLSs. X-ray diffraction analysis and photoluminescence (PL) measurements were used to evaluate the internal strain and strain-induced effects on band structures of SLSs. Comparison between observed and calculated results of x-ray analysis shows that free-standing (unsupported) SLSs are grown on a GaAs substrate. The emission peak energies in PL measurements are interpreted by taking into account the internal strain of individual layers in SLSs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339549
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  • 6
    Electronic Resource
    Electronic Resource
    Raman study of GaAs-InxAl1−x As strained-layer superlattices (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4342-4345 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to study the lattice-mismatch strains in GaAs-InxAl1−xAs strained-layer superlattices grown by molecular beam epitaxy with the layer thicknesses of 10–200 A(ring) and In content x of 0.11, 0.20, and 0.35. The strain-induced shifts of the longitudinal optic phonon modes indicate that the GaAs and InxAl1−xAs layers have the tensile and compressive strains, respectively, along the interfaces. The strain calculated from the observed frequency shift agrees with the lattice-mismatch strain given by the elastic theory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335522
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence study of InxAl1−xAs-GaAs strained-layer superlattices (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 588-592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the strain-induced effects of the InxAl1−xAs-GaAs strained-layer superlattices grown by molecular beam epitaxy. The evaluation of the effects of biaxial strain in the planes perpendicular to the [001] superlattice direction was made by conventional photoluminescence measurements. The observed optical transition energies were evaluated by a Kronig-Penny model involving strain-induced band structure. Comparison between the observed transition energies and the calculated energies suggests that the optical transition of strained-layer superlattices is explained by the band-gap shift and the valence-band splitting, which are induced by the biaxial strain.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336617
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  • 8
    Electronic Resource
    Electronic Resource
    SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1018-1020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110956
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  • 9
    Electronic Resource
    Electronic Resource
    A new technique for diagnostics of a radio-frequency parallel-plate remote plasma (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new parallel-plate remote plasma reactor was developed, containing a metal grid between the powered and the grounded electrode. Plasma parameters between the grid and a substrate holder have been measured in radio-frequency (13.56 MHz) argon plasmas using another grid with large surface area as a positive electrostatic probe. The electron density is lower than 106 cm−3 at rf power lower than 10 W; this demonstrates that the plasma is effectively confined. The electron energy distribution function is well approximated to a Maxwellian one. The electron temperature decreases as the pressure increases, and it is lower than 3 eV at pressures above 13.3 Pa, in agreement with electron temperatures in conventional plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112659
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  • 10
    Electronic Resource
    Electronic Resource
    Improvement of SiO2/Si interface by low-temperature annealing in wet atmosphere (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2107-2109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A postannealing technique was developed in order to improve the quality of SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition. The wave number of the antisymmetric stretching mode of Si–O–Si bonding in the SiO2 film increased from 1058 to 1069 cm−1 by an annealing in H2O vapor at 270 °C. It was estimated that averaged bonding angle of Si–O–Si was widened from 137.8° to 141.0°. The annealing in the H2O vapor ambient at 270 °C for 30 min efficiently reduced the interface trap density to 2.0×1010 cm−2 eV−1 and the effective oxide charges density from 7×1011 to 5×109 cm−2 for a metal-oxide-semiconductor (MOS) diode using the SiO2 film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113918
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