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  • 1
    Electronic Resource
    Electronic Resource
    Nondestructive superresolution imaging of defects and nonuniformities in metals, semiconductors, dielectrics, composites, and plants using evanescent microwaves (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 2783-2792 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have imaged and mapped material nonuniformities and defects using microwaves generated at the end of a microstripline resonator with 0.4 μm lateral spatial resolution at 1 GHz. Here we experimentally examine the effect of microstripline substrate permittivity, the feedline-to-resonator coupling strength, and probe tip geometry on the spatial resolution of the probe. Carbon composites, dielectrics, semiconductors, metals, and botanical samples were scanned for defects, residual stresses, subsurface features, areas of different film thickness, and moisture content. The resulting evanescent microwave probe (EMP) images are discussed. The main objective of this work is to demonstrate the overall capabilities of the EMP imaging technique as well as to discuss various probe parameters that can be used to design EMPs for different applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149795
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  • 2
    Electronic Resource
    Electronic Resource
    0.4 μm spatial resolution with 1 GHz (λ=30 cm) evanescent microwave probe (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1725-1729 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we describe evanescent field imaging of material nonuniformities with a record resolution of 0.4 μm at 1 GHz (λg/750 000), using a resonant stripline scanning microwave probe. A chemically etched tip is used as a point-like evanescent field emitter and a probe–sample distance modulation is employed to improve the signal-to-noise ratio. Images obtained by evanescent microwave probe, by optical microscope, and by scanning tunneling microscope are presented for comparison. Probe was calibrated to perform quantitative conductivity measurements. The principal factors affecting the ultimate resolution of evanescent microwave probe are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149658
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  • 3
    Electronic Resource
    Electronic Resource
    Evanescent microwave probes on high-resistivity silicon and its application in characterization of semiconductors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3083-3086 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we report the design, fabrication, and characterization of very high quality factor 10 GHz microstrip resonators on high-resistivity (high-ρ) silicon substrates. Our experiments show that an external quality factor of over 13 000 can be achieved on microstripline resonators on high-ρ silicon substrates. Such a high Q factor enables integration of arrays of previously reported evanescent microwave probe (EMP) on silicon cantilever beams. We also demonstrate that electron–hole pair recombination and generation lifetimes of silicon can be conveniently measured by illuminating the resonator using a pulsed light. Alternatively, the EMP was also used to nondestructively monitor excess carrier generation and recombination process in a semiconductor placed near the two-dimensional resonator. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149871
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of n-type dry thermally oxidized 6H-SiC metal-oxide-semiconductor diodes by quasistatic and high-frequency capacitance versus voltage and capacitance transient techniques (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7949-7953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dry-oxidized n-type 6H-SiC metal-oxide-semiconductor capacitors are investigated using quasistatic capacitance versus voltage (C-V), high-frequency C-V, and pulsed high-frequency capacitance transient (C-t) analysis over the temperature range from 297 to 573 K. The quasistatic C-V characteristics presented are the first reported for 6H-SiC MOS capacitors, and exhibit startling nonidealities due to nonequilibrium conditions that arise from the fact that the recombination/generation process in 6H-SiC is extraordinarily slow even at the highest measurement temperature employed. The high-frequency dark C-V characteristics all showed deep depletion with no observable hysteresis. The recovery of the high-frequency capacitance from deep depletion to inversion was used to characterize the minority-carrier generation process as a function of temperature. Zerbst analysis conducted on the resulting C-t transients, which were longer than 1000 s at 573 K, showed a generation lifetime thermal activation energy of 0.49 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356583
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  • 5
    Electronic Resource
    Electronic Resource
    Langmuir–Blodgett film passivation of unpinned n-type gallium arsenide surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 206-208 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the results of the passivation of photochemically unpinned GaAs surfaces using Langmuir–Blodgett (LB) films. Metal-insulator-semiconductor structures are fabricated with LB films as the insulator. The high-frequency capacitance versus voltage measurements show an order of magnitude decrease in the interface trap density (1011 cm−2 eV−1) as compared to the GaAs/anodic oxide interface. The hysteresis in the capacitance versus voltage curves was reduced from a 3-V shift in the flatband voltage, to about a 1-V shift, a level which has been seen in Si/LB film metal-insulator-semiconductor structures. Passivation with LB films is of interest because of their interesting electrical, chemical, and optical properties that can be used in GaAs-based devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99520
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  • 6
    Electronic Resource
    Electronic Resource
    Acoustoelectric effects in superlattices using a separate-medium structure (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interaction of the surface acoustic wave (SAW) with the GaAs/AlAs superlattice is investigated using a separate-medium convolver structure. The magnitude and polarity of the acoustoelectric voltages exhibit strong temperature and SAW frequency dependences, a phenomenon that is not observed in homogeneous semiconductors. Possible SAW-superlattice interaction models that tentatively explain the observed data are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98414
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  • 7
    Electronic Resource
    Electronic Resource
    Real-time imaging of semiconductor space-charge regions using high-spatial resolution evanescent microwave microscope (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1460-1465 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution evanescent microwave probe (EMP) was used to detect and image depletion regions in solar cell p-n junctions in real time. The EMP uses a microwave resonator operating around 10 GHz that is coupled to a thin wire probe. Unable to travel beyond the waveguide discontinuity, the microwave fields set up evanescent fields in the tip's vicinity. When coupled to an object nearby, these evanescent fields are modified and change the resonant characteristics of the resonator. The microwave conductivity of the nearby object affects the extent of the modification of the probe's output which is monitored as the probe is scanned over the object. Using these EMP scans, steady-state and transient expansions/contractions of the p-n junction's depletion region under dc and pulsed reverse/forward biases are mapped. These experimental data along with the conductivity calibration of the EMP were then used to quantitatively calculate doping concentrations, diffusion lengths, and carrier recombination lifetimes in the junction. Junctions are one of the most crucial building blocks of semiconductor devices and these studies clearly show the ability of the EMP in quantitative and nondestructive evaluations of electronic devices and circuits. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150480
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  • 8
    Electronic Resource
    Electronic Resource
    Mapping of crystal defects and the minority carrier diffusion length in 6H–SiC using a novel electron beam induced current technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3986-3992 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a mapping technique used to correlate the structure of defects with their electrical characteristics in semiconductors. Interesting results that directly and clearly show the influence of micropipes on the minority carrier diffusion length were obtained in both p- and n-type 6H–SiC. The method is based on electron-beam induced current (EBIC) measurements in planar structures. Values of hole diffusion length in defect free regions of n-type 6H–SiC, with a doping concentration of 1.7×1017 cm−3, ranged from 1.46 to 0.68 μm. These values were reduced to below 0.1 μm at the center of large defects. In addition, measurements on p-type 6H–SiC resulted in electron diffusion lengths ranging from 1.42 to 0.8 μm which also showed drastic reductions near defects. Our planar mapping technique measures diffusion lengths along a linescan. This linear map is then overlaid onto the EBIC image, allowing direct visualization of defects and their effect on minority carrier diffusion lengths. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368578
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  • 9
    Electronic Resource
    Electronic Resource
    Transient thermography using evanescent microwave microscope (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3387-3390 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Very high spatial resolution thermography is of great importance in electronics, biology, and in many other situations where local variations in temperature are needed to study heat dissipation or to monitor metabolism rate which can be directly related to the heat production. Infrared imaging techniques probably are the best way of obtaining thermal maps of large structures. However, the spatial resolution of infrared imaging techniques is limited to a few 100 μm and their temperature resolution is usually around 0.1 K. Here we report on a new evanescent microwave method that is capable of mapping temperature distributions with (approximate)1 μm spatial resolution. The temperature sensitivity of this probe was better than 0.1 V/K with a minimum detectable signal of 0.01 K with a response time faster than 1 μs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149924
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  • 10
    Electronic Resource
    Electronic Resource
    Novel hydrogen sensors using evanescent microwave probes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3707-3713 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Gas sensing using local probes, such as atomic force and scanning tunneling microscopes, enables accurate measurement and detection of very small quantities of gas molecules and chemicals. Here, we report a unique application of the evanescent microwave probes (EMP) in detecting hydrogen. The EMP is extensively used to map resistivity and other nonuniformities in a variety of materials including metals, insulators, semiconductors (both organic and inorganic), composites, and biological specimens. The EMP detects the microwave resistivity of the sample and it has an exponential sensitivity to distance and thickness variations. Here, the EMP is used to detect deflections in a Pd-coated cantilever and to quantify the amount of stress and the resistivity change in the Pd film as a function of hydrogen concentration. The stress was in the range of 5.26–8.59×107 Pa for H2 concentrations of 0.5%–1.4% at room temperature, which is about three times larger than that found in the bulk Pd for the same range of H2 concentrations. The Pd film's resistivity changed by 13.5% at 3.0%H2 concentration and it resulted in an 18% change in the EMP signal. The EMP with an appropriate frequency can also be used to resonantly detect various physi-absorbed molecules at the surface of an appropriate material as well. We discuss these possibilities along with some specific experimental data. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149981
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