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Digitale Medien

Differential evaluation of the Hall effect in silicon with oxygen-related donors (1984)

Hoffmann, H. J. ; Nakayama, H. ; Nishino, T. ; [weitere]

Springer

Applied physics 33 (1984), S. 47-50

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ISSN: 1432-0630

Schlagwort(e): 71.55.Fr ; 72.80.Cw

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The free-electron concentration as a function of the temperature is analyzed differentially for silicon with oxygen-related donors formed by annealing at 430 °C. The analysis yields defect levels atE c−0.25 eV,E c−0.14eV, andE c−0.055 eV assuming the degeneracy factors to be unity. The corresponding defect level concentrations are approximately proportional to the annealing time. Their formation rates are between 1 and 3×1010cm−3s−1 at 430 °C annealing temperature.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01197085

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Digitale Medien

Charge carrier statistics of semiconductors containing defects with negative electronic correlation energy (1982)

Hoffmann, H. J.

Springer

Applied physics 27 (1982), S. 39-47

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ISSN: 1432-0630

Schlagwort(e): 71.55.Fr ; 72.80.Cw ; 71.45.Gm

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The free charge carrier concentration as a function of the reciprocal temperature and the doping level [p(1/T)- andp(C)-characteristics] is calculated from the neutrality equation of a semiconductor containing positive or negativeU centers. The typical exponential laws and power laws of thep(1/T)- andp(C)-characteristics are given both for positive and negative correlation energy of the bound charge carrier pairs. Furthermore, the characteristics are evaluated differentially, in order to obtain criteria for the presence of negativeU centers in semiconductors.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF01197545

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Digitale Medien

Photo-enhanced etching ofn-Si (1984)

Hoffmann, H. J. ; Woodall, J. M.

Springer

Applied physics 33 (1984), S. 243-245

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ISSN: 1432-0630

Schlagwort(e): 73.40.Mr ; 82.30.Lp ; 85.30.De ; 85.30.Tv

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract The etch rate ofn-type Si in diluted HF solutions was investigated as a function of the bias voltage applied to the Si/electrolyte interface in the dark and under illumination. It was observed that the etch rate depends very sensitively on the minority carrier flow through this interface. For an illumination intensity of 5.3×1016 photons/cm2 s (γ=550nm) and the depleted Si/electrolyte interface biased slightly (less than 1 V) in reverse, the etch rate is increased by a factor of more than 1000 as compared to the etch rate under open-circuit condition. This effect can be used to create etch patterns during device processing without prior masking the semiconductors. Using the same effect it should be possible to trim the thickness of Si layers on (semi-) insulating substrates for the fabrication of enhancement-mode FETs.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00614665

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