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  • 1
    Electronic Resource
    Electronic Resource
    Thickness dependence of magneto-optical properties in face-centered-cubic Co/Cu(001) ultrathin films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4977-4979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical Kerr spectra of ultrathin Co films grown on Cu(001) surfaces have been measured in situ. The growth mode and the crystal structure have been investigating by reflection high-energy electron diffraction observation. A 20-A(ring)-thick fcc Co grown on Cu(001) had a lateral lattice constant of 3.59±0.01 A(ring), which was about 1.4% expanded compared with that of the bulk fcc Co. There was a remarkable difference above 4 eV in ωσyz spectra between 20- and 1000-A(ring)-thick films. ωσyz spectra for 20-A(ring)-thick Co film showed a resonance-type structure at around 5 eV. It is considered that the structure is caused by the lower energy shift of the 1→6 interband transitions due to the narrowing of the 3d bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361609
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic tunneling effect in Fe/Al2O3/Ni1−xFex junctions : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6262-6264 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the magnetoresistance ratio, ΔR/Rs, on the Ni content has been studied in Fe/Al2O3/Ni1−xFex (0≤x≤1) tunneling junctions. The value of ΔR/Rs at 4.2 K increased with increasing x and exhibited a maximum of ∼35% at x=0.8. The result is discussed by taking into account the spin-polarization of ferromagnetic electrodes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362028
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  • 3
    Electronic Resource
    Electronic Resource
    Comparison between giant magnetoresistance in Fe–Co–Ni/Cu multilayers and anisotropic magnetoresistance in the ternary alloys : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5187-5189 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The concentration dependence of giant magnetoresistance (GMR) at the second peak in the Fe–Co–Ni/Cu multilayers and that of anisotropic magnetoresistance in the Fe–Co–Ni ternary alloy films and ribbons in the fcc γ-phase structure have been systematically examined at 4.2 K and room temperature. The concentration dependence of the GMR ratio is well explained by taking into account the spin-dependent interface and bulk scattering and the spin-independent scattering. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364460
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  • 4
    Electronic Resource
    Electronic Resource
    Local current distribution in a ferromagnetic tunnel junction measured using conducting atomic force microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5206-5208 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The local electrical properties were measured simultaneously with the topography for a Ta(50 Å)/Fe20Ni80(50 Å)/IrMn(150 Å)/Co(50 Å)/Al(13 Å)-oxide junction. The electrical image showed the contrast with around a few nm lateral size and a strong correlation with the topographical image was not observed. In the local current–voltage characteristics, data within the bias voltage of ±1.5 V were fitted well to Simmon's equation and we obtained the barrier height Φ=1.9 eV and the thickness d=12 Å. On the other hand, data with the bias voltages higher than 3 V were fitted well to Fowler–Nordheim equation. The histogram of current density was calculated by taking into consideration a Gaussian distribution of the barrier thickness and the height. The distribution of the barrier height can explain the experimental result realistically. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373296
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  • 5
    Electronic Resource
    Electronic Resource
    Magnon-assisted inelastic excitation spectra of a ferromagnetic tunnel junction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5209-5211 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Inelastic-electron-tunneling spectroscopy (IETS) has been applied to investigate the spin dependent tunneling process for a Ta(50 Å)/Fe20Ni80(60 Å)/IrMn(300 Å)/Co(60 Å)/Al(13 Å)-oxide/ Co(40 Å)/Fe20Ni80(200 Å) spin-valve-type tunnel junction. IET spectra for both parallel and antiparallel magnetization configurations of ferromagnetic electrodes showed a strong peak at 12 mV. The subtraction spectrum defined by the difference between the spectra of both the configurations was calculated. Spin-independent inelastic excitation processes are not affected by an external magnetic field, and thus, the subtraction spectrum indicates the inelastic modes induced only by the magnetic origin. It showed a strong peak at 12 and 20 mV for the positively and negatively biased direction of the bottom electrode, respectively. The tendency of the tunneling magnetoresistance ratio to decrease with bias voltage agreed with the shape of the subtraction spectrum. By assuming the surface magnon excitation, we obtained the distributions of the correlation length and the Curie temperature for both ferromagnetic electrode surfaces faced on the insulator. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373297
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  • 6
    Electronic Resource
    Electronic Resource
    Small diameter nozzle plasma arc as a processing tool (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 3384-3388 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: High-power-density plasma arc equipment with a small diameter nozzle of 0.1–0.3 mm has been developed, which produces power density of about 104 W/mm2 at the exit of the nozzle. The density is comparable to those produced by electron and laser beams. In the present article, development procedure, power density on the target surface, and processing capability in comparison to the conventional electron and laser beams are described. The power density as the processing heat source depends on the kind of processing. The apparent power density in cutting is of the order of 104 W/mm2; on the other hand, that in surface hardening is of the order of 102 W/mm2. The processing capability for causing melting such as cutting and welding does not depend on the working distance, which is defined as the distance between the torch and target material; furthermore, the deviation of the torch from the correct position does not affect the processing capability. The equipment developed is suitable for an automated production system because high precision position control of the torch is not required.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142556
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  • 7
    Electronic Resource
    Electronic Resource
    Formation of metastable compounds and magnetic properties in rapidly quenched (Fe1−x Cox)5Sm and (Fe1−xCox)7Sm2 alloy systems (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5974-5976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of metastable (TM)5Sm and (TM)7Sm2 (TM=Fe-Co) compounds and their magnetic properties have been investigatyed by the x-ray diffraction method and analysis of thermomagnetization curves for rapidly quenched (Fe1−x Cox)5Sm and (Fe1−x Cox)7Sm2 (0≤x≤1.0) alloys. The (Fe1−x Cox)5Sm compound is formed with a single phase in the range 0.7≤x≤1.0 and a mixture with other stable compounds in other composition range. On the other hand, the metastable (TM)7Sm2 compound exists in the mixed state with a large amount of (TM)3Sm stable compound in the range 0.7≤x≤1.0. The single phase (RM)5Sm compound exhibits a huge coercivity of 5–14 kOe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342167
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  • 8
    Electronic Resource
    Electronic Resource
    Optical properties of amorphous InSb (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 395-397 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have presented experimental results for the optical constants of amorphous InSb films prepared by rf plasma deposition. The measured data are analyzed on the basis of a simplified model of nondirect optical transitions between the valence and conduction bands. Introducing a phenomenological damping effect into the model, the calculated spectra become structureless, which are typically observed in tetrahedrally bonded amorphous semiconductors. Results are in reasonable agreement with the experimental data over the entire range of photon energy (0.3–5.3 eV).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350721
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  • 9
    Electronic Resource
    Electronic Resource
    Epitaxial growth of InSb on sapphire by rf sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 116-118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InSb films have been deposited directly by rf sputtering on sapphire substrates. X-ray diffraction and scanning electron microscopy data are presented to show that the InSb layer on sapphire (0001) is epitaxial and grows with (111) parallel to the substrate surface. Optical absorption studies of the epitaxial film also reveal distinct spectral features which resemble these from bulk, single-crystal InSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104972
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  • 10
    Electronic Resource
    Electronic Resource
    The electronic structure and energy level alignment of porphyrin/metal interfaces studied by ultraviolet photoelectron spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1899-1901 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic structures of 5, 10, 15, 20-zinctetraphenylporphyrin (ZnTPP)/metal (Au, Ag, Al, Mg) interfaces prepared in ultrahigh vacuum were investigated by ultraviolet photoelectron spectroscopy (UPS). We found that the electronic energy levels of ZnTPP align to the vacuum level of substrate metal, with a constant energy shift of vacuum levels across the interface. These findings cannot be explained by the simple models assuming vacuum level alignment at the interface. We also found that sample exposure to oxygen induces energy level shift in close relation with change of substrate work function at oxygen exposure. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114370
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