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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties and microstructures of dense branching morphology observed in Bi/Al/Mn/SiO multilayers : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6118-6120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of domain structure observed in the annealed Bi/Al/Mn/SiO films is described. The domain is embedded into a round colony called dense branching morphology. Increasing ramified branches and conspicuous circular envelopes are two distinguished features of the colony. Magnetic measurement indicated that the branches of different contrasts were relevant to the different magnetization orientations in the films. It was also revealed that the Kerr rotation topography in high spatial resolution could exactly match the branch geometry on the morphology. Composition analyses showed that intensive diffusion and segregation of Bi atoms during the thermal annealing contributed a lot to the formation of the domain structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352720
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  • 2
    Electronic Resource
    Electronic Resource
    Magneto-optical properties of MnBiAl thin films : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5984-5986 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn-Bi-Al thin films were produced by sequential evaporation of the constituents, followed by an anneal at 300 °C. The temperature and composition dependencies of the Kerr rotation angle, absolute reflectivity, and magnetic anisotropy were measured. The results show that, up to 30 at. % Al concentration, the thin films retain the pure MnBi hexagonal structure. Further, for suitable Al content, the films have the same large Kerr rotation as MnBi. Pure MnBi films exhibit perpendicular anisotropy at room temperature and in-plane anisotropy for temperatures below 142 K. In contrast, the Al-doped films prepared here have perpendicular anisotropy down to at least 85 K. The increased coercivities of the Al-doped films are attributed to the occupation of grain-boundary and interstitial sites of the NiAs-type hexagonal structure by the Al atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347812
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  • 3
    Electronic Resource
    Electronic Resource
    The variation of anisotropy and magnetization orientation with temperature in Tb/Fe multilayers : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6907-6909 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On the basis of the co-effect of the crystal field with a random distribution and the molecular field and using anisotropic static magnetic couplings, we calculated the polar angle aitch-theta of the magnetic moment in 15×(26 A(ring) Tb/40 A(ring) Fe)+40 A(ring) Fe multilayers as function of temperature from 4.2 to 300 K, which agrees well with experiment. As a result of the calculation, the width of interface mixing layer and the coefficient of the crystal field are determined.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352430
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  • 4
    Electronic Resource
    Electronic Resource
    Cohesion and promotion energies in the transition metals: Implications of the local-density approximation : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5688-5690 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The accuracy of the local-density (LDA) or local-spin-density (LSDA) approximations when applied to transition metals is of great concern. Estimates of the cohesive energy compare the total energy of the solid with that of the free atom. This involves chosing the reference state of the free atom which, as a rule, will not be the free atom's ground state in LDA or LSDA. Comparing one reference state versus another, e.g., the dn−1s vs dn−2s2 for a transition metal, corresponds to calculating an s-d promotion energy Δ, which may be compared with experiment. Gunnarsson and Jones (GJ) [Phys. Rev. B 31, 7588 (1985)] found for the 3d row that the calculated Δ displayed systematic errors which they attributed to a difference in error within the LSDA in the treatment of the coupling of the outer-core electrons with the d versus non-d valence electrons. This study has been extended to relativistic calculations for the 3d, 4d, and 5d rows and for other promotions. The situation is more complicated than suggested by GJ, and its implications for cohesive energy estimates will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347912
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  • 5
    Electronic Resource
    Electronic Resource
    Perpendicular anisotropy in the amorphous TbCo/Si multilayers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6845-6847 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TbCo/Si multilayers prepared by the rf magnetron sputtering system with various Si thickness have been investigated. X-ray diffraction, magnetic measurement and Kerr rotation have been performed. No antiferromagnetic coupling was found for the system. With the thickness of Si layer tSi increasing, the perpendicular anisotropy constant Ku, and the saturation magnetization Ms decreased rapidly. It was assumed that Co2Si and Tb had been formed in the interfacial zone between TbCo and Si layers due to the interlayer diffusion. The decreasing of Ms is attributed to the decreasing of the effective thickness of magnetic layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372861
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  • 6
    Electronic Resource
    Electronic Resource
    Tunneling magnetoresistance and magnetic properties of Fe–Al2O3 nanogranular films (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6877-6879 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tunneling giant magnetoresistance (MR) of the Fe–Al2O3 nanogranular films has been observed over a wide range of Fe volume fraction x and it took a maximum of 4.4% at room temperature for the film with x=0.45 at H=10 kOe. Furthermore, the field dependence of MR of the samples is well described by the form proportional to the square of the magnetization. Moreover, an estimate of the magnetic anisotropy energy density Ku increases with the decrease of x, yielding a value 2 orders of magnitude greater than the value for bulk Fe when x=0.23. The Bloch's law, MS(T)=MS0(1−BTb), can also hold for all the samples but with nonbulk parameters dependent on the Fe volume fraction. These results reveal a percolation effect on the magnetic properties, as well as the conductance, in such nanogranular films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357836
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  • 7
    Electronic Resource
    Electronic Resource
    Micromagnetic simulation in two antiferromagnetically coupled ferromagnetic layers separated by a spacer (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6994-6996 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: On the basis of a micromagnetic model, magnetization reversal in two antiferromagnetically coupled ferromagnetic layers (10 nm t1/0.9 nmM/t2 nm films with t2=2, 3, 4, 5 nm, here t1 and t2 are the top and bottom layers, respectively, and M the spacer) with the same random anisotropy arrangement can be represented by a computer simulation. The calculation indicates that the appearance of a full antiferromagnetic coupling at remanence requires the antiferromagnetic coupling constant j=−3.5 erg/cm2 for the 10 nm t1/0.9 nmM/3 nm t2, films and it needs a large j value if t2 increases for the case of Ku2=Ku1=1×106 erg/cm3 and Ms1=Ms2=400 emu/cm3. Hc follows the equation Hc=−0.755j/Mst1 (j〈0). Why the calculated Hc values deviate from Hcmax=−j/Mst1 is discussed. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1361269
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  • 8
    Electronic Resource
    Electronic Resource
    Kerr rotation enhancement and correlation between perpendicular anisotropy and Kerr effect in PtCu(Al,Ag)/Co multilayers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3957-3961 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of doping Cu, Al, and Ag in Pt spacer layers on the perpendicular anisotropy Ku and the polar Kerr rotation aitch-thetak in the wavelength range of 400–800 nm have been investigated for sputtered 0.8 nm Pt/0.3 nm Co multilayers. Ku and aitch-thetak measured below 633 nm decrease with the increase of the concentrations of Cu, Al, and Ag in the Pt spacer layers. It is found that the variation of Ku and aitch-thetak with the doping concentrations follows a quadratic equation of Ku=aaitch-theta2k+b (a, b are constants here). This suggests that both Ku and aitch-thetak originate from a common micromechanism, i.e., spin-orbit coupling. An obvious enhancement in the peak of the polar Kerr rotation appears at 770 nm for Cu and Ag dopings and at 680 nm for Al doping. Moreover, the polar Kerr rotation aitch-thetak* at this enhanced peak shows an oscillation behavior with the increasing doping concentrations in the Pt spacer layers. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363353
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  • 9
    Electronic Resource
    Electronic Resource
    Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8007-8010 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-optical experiments have been performed on free and bound electrons in GaN films and GaN/AlGaN heterojunctions. Cyclotron resonance of two dimensional electron gas in GaN/ AlxGa1−xN heterojunctions has yielded m* = 0.23 m0, x-dependent scattering times consistent with values from transport measurements, and an apparent unexplained level crossing at 70 cm−1. Infrared absorption of doped GaN films has shown that the binding energy of Si donors, 29.0 meV, is much smaller than that of residual donors, in agreement with transport measurements, thus suggesting donor spectroscopy as a useful technique for defect/impurity qualitative analysis. Zeeman effect of the donor spectra has been used to determine the GaN low frequency dielectric constant, ε0 = 10.4. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362351
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  • 10
    Electronic Resource
    Electronic Resource
    Investigation of thermomagnetic recording on MnBiAl films and observation of their recorded domains (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5452-5454 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Static thermomagnetic recording on MnBiAl films at 633 nm is reported. The intrinsic Kerr rotation of the sample investigated is 1.8° at 633 nm. A 14 mW pulsed laser was used to write stable domains with diameter of 1.2 μm under zero external applied magnetic field, and a 12 mW pulsed laser was utilized to erase the recorded domains using an external field 600 Oe. The direct observation of the homogeneously recorded domain arrays of 16×22 points on an area of approximately 0.01 mm2 shows that they possess a very good circular configuration, distinct margin, and a very high contrast between "0'', "1'' states due to large Kerr rotation θk and coercivity Hc. The number of write/erase cycles on MnBiAl is over 106 times, which is a significant improvement over the 103 times possible with MnBi. Measurements demonstrate that MnBiAl film is a promising magneto-optical recording medium. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359241
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