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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 3448-3452 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Biochemistry 28 (1989), S. 5909-5916 
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2111-2113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By inducing an electrical discharge in an annular gas plenum connected to a vacuum diode by a narrow annular slit, we demonstrate that microgram preionized plasma liners can be formed and imploded by a dc charged Blumlein pulser to efficiently convert electrical energy into soft x rays. The submillimeter x-ray source can in principle be scaled to the high repetition rate needed for x-ray lithography. In a proof of principle experiment, we have observed using krypton up to 0.5, 20, and 100 J of x-ray output above 1.5 keV, 500 eV, and 150 eV photon energies, respectively.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2859-2861 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Norde function [J. Appl. Phys. 50, 5052 (1979)] used for measuring the barrier height, series resistance, and ideality factor of a Schottky barrier diode has been modified to obtain the same parameters for a triangular barrier diode (TBD). Unlike Schottky barrier diodes, the barrier height of a TBD depends upon the applied voltage and changes linearly with it. In order to calculate the additive term in the TBD barrier height, the modified function is therefore plotted for both reverse and forward bias cases. It is shown later that the modified Norde function enhances the accuracy of the results.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1207-1211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic model for the control of the barrier height of a triangular-barrier diode (TBD) is proposed. It is shown that an extra (p- or n-type) doping given to the two intrinsic layers of a TBD changes its barrier height over a wide range (over all 40%). A simple closed-form expression is derived to give the dependence of barrier height on the extra dopings. It is seen that the ideality of the diode is not affected in spite of a wide range of changes obtained in the barrier height. Furthermore, the differential resistance of the device is shown to exponentially decrease with the extra n-type doping given to the structure. Such a strong dependence leads to an improvement in the forward-bias cut-off frequency of the device.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 978-992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a worldwide effort to produce a soft x-ray source for submicron microlithography to manufacture future generation large scale integrated microchips. The gas puff plasma discharge has been suggested as a viable alternative for low volume facilities which require relatively low throughputs with a single aligner station. The repetition rate for such systems is limited by the large gas flow into the vacuum system with the standard electromechanical puff valve. A unique puff arrangement is being developed which will limit the dead gas flow and, in principle, will allow for the development of high repetition rate systems. In this arrangement, the gas flows continuously from a low-pressure plenum through an annular aperture into the Z-pinch electrode gap. A discharge through a single turn solenoid coil mounted on the outside of the plenum inductively heats the gas, temporarily increasing the mass flow to produce a low mass (〈1 μg), preionized liner which is imploded by a Z-pinch current discharge. (Multiturn coils have also been used. However, all the experiments reported in this paper used a single turn configuration.) Experiments were carried out with a variety of low-energy (〈2.5 kJ) drivers including capacitor banks, peaking capacitors, and dc charged paper/castor oil Blumleins. Radiation measurements in the ultrasoft and soft x-ray regions were made using x-ray diodes, p-i-n diodes, and a time integrated pinhole camera. A slug model coupled to a capacitor bank or Blumlein circuit solver is used to estimate the liner dynamics as well as the load current and voltage.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1702-1706 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4103-4107 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified model of a triangular barrier diode has been proposed and analyzed by considering the effect of low to moderate p-type doping in the two intrinsic regions. The presence of such acceptor impurities is shown to increase the effective barrier height. The functional dependence of barrier height, saturation current, and ideality factor on various technological parameters is discussed. A method to determine the barrier height and effective Richardson constant has also been suggested. The high-speed switching behavior of this diode is shown to improve.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 1898-1900 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk barrier diodes are majority carrier diodes, in which the current is given by the thermionic emission of carriers over a barrier present in the bulk of the material. The height of this barrier depends on the dopings of the various layers of the diode, which has a p+np or n+pn structure. In this paper, different ways to determine this barrier height and its controlling parameters, have been suggested by considering the effect of temperature on the current and the applied voltage of the device.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 978-980 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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