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  • 1985-1989  (3)
  • 1960-1964  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1106-1108 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Etching enhancement in through-implanted SiO2 has been characterized by nuclear-deposited energy independently of implant conditions. An empirical expression has been proposed to describe the etching rate for any implantation. The enhanced etching has been related to the Si-O vibrational frequency shift. Etching enhancement has been found to reflect the structural change in SiO2, and to be a good measure of degradation. The structural change of SiO2 stops and the etching rate reaches a maximum for an ion dose corresponding to nuclear-deposited energy larger than 3.4×1023 eV/cm3. This energy is equal to the total SiO bonding energy (3.8 eV) in a unit volume of SiO2.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1400-1402 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation processes of terraces on (100) silicon surfaces during annealing at 1000 °C were observed in situ by ultrahigh vacuum reflection electron microscopy. Terraces were formed on staircases made up of monoatomic steps, preferentially at the sites where stairs were larger than average. The sites are formed by surface undulation. It was found that the terrace grew, or extended, in both up-step and down-step directions almost at equal rates. The terrace thus grew not by sublimation, but by adhesion and removal of atoms at respective terrace edges. Thus, the interlayer migration of adatoms plays an important role in the terrace growth.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 26 (1961), S. 1050-1052 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 9 (1987), S. 0 
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Life prediction for creep-fatigue loading conditions should be related to creep damage mechanisms. In order to examine the effect of the creep damage mode on rupture life under creep-fatigue loading, a “combined creep-fatigue loading test” was carried out on 316 stainless steel. In this method, creep loading and fatigue loading are repeated alternately. The fracture criteria under combined loading closely depend on the creep fracture modes of the static creep test. A new life prediction method which uses this new fracture criterion is proposed. The criteria are changed when the creep damage mode varies. In order to verify the adequacy of this method, fatigue tests with a tensile strain-hold wave form were carried out. It is clear that rupture life in such fatigue tests is dependent on the chosen fracture criteria.
    Type of Medium: Electronic Resource
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