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  • 1
    Digitale Medien
    Digitale Medien
    Hydrophobic properties of zeolites (1976)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 80 (1976), S. 60-64 
    Details
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie , Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/j100542a013
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  • 2
    Digitale Medien
    Digitale Medien
    Temperature-dependent behavior of low-temperature-grown GaAs nonalloyed ohmic contacts (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5637-5641 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A study of nonalloyed ohmic contact structures consisting of Au/Ti metallization deposited on a thin (3.5–5 nm) layer of low-temperature-grown GaAs (LTG:GaAs) on a thin (10 nm) layer of heavily doped n-type GaAs is summarized. We demonstrate that this Au/Ti:LTG:GaAs/n+GaAs contact structure has a stable specific contact resistance between 40 and 300 K, with measured contact resistance as low as 2×10−6 Ω cm2 at 40 K. Based on comparisons of the measured data with calculations using a uniformly doped Schottky model, we infer that the activation doping density in these structures is higher than 5×1018 cm−3, and that the surface potential barrier height is lower than 0.7 eV (midgap). The characteristic current–voltage curves of the nonalloyed contact show that tunneling is the primary conduction mechanism. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1410324
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  • 3
    Digitale Medien
    Digitale Medien
    Strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures by x-ray diffraction and photoluminescence (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1251-1254 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The onset of strain relaxation in In0.2Ga0.8As/GaAs quantum-well structures is investigated. X-ray diffraction shows that when the InGaAs thickness increases beyond its critical thickness, another peak on the right shoulder of the GaAs peak appears, indicating that the top GaAs layer is being compressed in the growth direction by the relaxation of the InGaAs layer. Energy shifts of 44 and 49 meV are observed, respectively, from the strains of the InGaAs and GaAs top layers when increasing the InGaAs thickness from 300 and 1000 Å. These energy shifts are in agreement with theory calculated based on the relaxation process observed in x-ray diffraction, providing evidence that the relaxation occurs from near the bottom InGaAs/GaAs interface while the top interface still remains strained. This result is further corroborated by the images of cross-sectional transmission electron micrographs which show that most of the misfit dislocations are confined near the bottom interface. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372004
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  • 4
    Digitale Medien
    Digitale Medien
    Carrier depletion by defects levels in relaxed In0.2Ga0.8As/GaAs quantum-well Schottky diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1369-1373 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An increase in leakage current accompanied by a drastic carrier depletion is found for InGaAs/GaAs Schottky diodes when the InGaAs thickness is larger than its critical thickness. Due to drastic carrier depletion, free-carrier concentration around the InGaAs region for relaxed samples cannot be obtained from capacitance–voltage data but from resistance–capacitance time constant effect observed in capacitance–frequency measurement. A trap at 0.33 to 0.49 eV is observed for relaxed samples by deep-level transient spectroscopy. The resistance caused by carrier depletion has an activation energy close to that of the trap, supporting that the carrier depletion is caused by capture from the trap. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.372022
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  • 5
    Digitale Medien
    Digitale Medien
    Preparation of dealuminized mordenite (1976)
    s.l. : American Chemical Society
    Inorganic chemistry 15 (1976), S. 295-297 
    Details
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ic50156a011
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  • 6
    Digitale Medien
    Digitale Medien
    Partial dealumination and healing of faujasites by chromium(III) salt solutions (1978)
    s.l. : American Chemical Society
    Inorganic chemistry 17 (1978), S. 610-612 
    Details
    ISSN: 1520-510X
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/ic50181a018
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  • 7
    Digitale Medien
    Digitale Medien
    Electrical characteristics and deep-level admittance spectroscopies of low-temperature grown GaAs p-i-n structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1255-1258 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The properties of low-temperature grown GaAs are studied via the electrical characterization of p-i-n structures with part of the intrinsic layer grown at 300 °C. Comparisons are made between the low-temperature and normally grown samples. The current of the low-temperature sample is about two orders of magnitude higher than that of the normally grown sample in both forward and reverse bias. From temperature-dependent analysis, the leakage current of the low-temperature sample is contributed by the recombination current through defect levels around the midgap, from which a recombination lifetime of 9.4×10−12 s was obtained. By using admittance spectroscopy we observed a dominant electron level at 0.60 eV with a corresponding capture cross section of 1.0×10−13 cm2 that was not observed in the normally grown sample; thus it is believed to be introduced by the As-rich low-temperature layer. © 1997 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.363837
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  • 8
    Digitale Medien
    Digitale Medien
    Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1081-1083 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The GaAs sample under study is a n-low temperature-i-p structure grown by molecular beam epitaxy with a low-temperature (LT) layer grown at 300 °C and annealed at 620 °C for 1 h. Admittance measurements on this sample reveal a negative capacitance at low frequency. This work analyzes the origin of the negative capacitance and its corresponding frequency-dependent conductance by combining two current components: charging–discharging current and the inertial conducting current. Analysis results indicate that the activation energies and time constants of both current components closely resemble each other and should correspond to the same trap. Based on the results presented herein, we can conclude that the negative capacitance at low frequency provides evidence of a generation-recombination center with an activation energy of 0.77 eV in the LT layer. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.120971
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  • 9
    Digitale Medien
    Digitale Medien
    Electroabsorption field imaging between coplanar metal contacts on semi-insulating semiconductor epilayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 72-74 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We use excitonic electroabsorption field imaging to study the electric field distribution between coplanar gold Schottky contacts on semi-insulating photorefractive AlGaAs epilayers. The field imaging shows consistently large localized enhancements of the electric field adjacent to the anode, followed by a region of reduced field. Complex behavior occurs at the cathode, with high-field regions extending far from the contact. These inhomogeneous near-contact field profiles are determined by the superposition of both diffused and drifted charge which affect the performance of many optoelectronic devices that use planar contacts or striplines on semi-insulating substrates. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.116761
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  • 10
    Digitale Medien
    Digitale Medien
    Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1403-1409 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The sample considered herein is an annealed low-temperature (LT) molecular beam epitaxially grown GaAs of n-LT-i-p structure with the LT layer grown at 300 °C. Characteristics involving the dominant trap level located at about 0.66 eV below the conduction band are obtained by analyzing the data of the admittance spectroscopy, capacitance–voltage, current–voltage, and frequency-dependent conductance experiments. This trap pins the fermi level of the LT layer and makes the LT layer semi-insulating. In this structure, the level interacts with both the conduction band and the valence band with a hole emission time constant characterized by an activation energy of 0.77 eV and a cross section of 1.1×10−13 cm2. This level is also an effective generation-recombination center when the temperature exceeds 300 K. © 1998 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.366844
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