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Influence of the light-induced degradation on the extended state mobility in hydrogenated amorphous silicon (1996)

Schmidt, J. A. ; Cutrera, M. ; Buitrago, R. H. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 69 (1996), S. 4047-4049

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ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: We measured the effects of light soaking on the extended state electron mobility in intrinsic and n-type doped hydrogenated amorphous silicon samples. We obtained the temperature dependence of the mobility in the range 0–80 °C, using a recently proposed method [Dawson et al., Appl. Phys. Lett. 63, 955 (1993)]. We found a decrease of the mobility as the degree of light-induced degradation increased. We suggest that these changes in the extended state transport are caused by an enhancement in the magnitude of the potential fluctuations introduced by the extra created charged defects. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.117866

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Digitale Medien

The role of surface in sputtered amorphous silicon: An oxidation study (1985)

Cutrera, M. ; Gennaro, A. M. ; Battioni, M. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 4251-4255

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ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: High porosity amorphous silicon samples were produced by dc-sputtering in high argon pressure. Post-deposition oxidation and correlated effects were studied in order to elucidate the surface contribution to the measured properties. Infrared spectroscopy, used to follow the oxygen concentration during the oxidation process, allows us to detect the way in which the oxygen is attached. The electron spin density, absorption edge, and dark conductivity are measured in correlation with the oxygen content. We conclude that, for this material, dangling bonds are preferentially located near the inner surface of the porous structure. It is suggested that band bending is responsible for conductivity enhancement and two alternative mechanisms are proposed to explain the absorption edge shift.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.335560

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