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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the interfacial defects in a nanocrystalline Ni-P alloy by positron annihilation spectroscopy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4451-4453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nanocrystalline Ni-P alloy prepared by the crystallization method has been studied by using positron lifetime spectroscopy. The lifetime results and the corresponding interfacial defects in the sample are discussed in comparison with those of the nanocrystalline iron materials prepared by compacting ultrafine powders.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348377
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial growth and characterization of zinc-blende gallium nitride on (001) silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4933-4943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN films have been epitaxially grown onto (001) Si by electron cyclotron resonance microwave-plasma-assisted molecular-beam epitaxy, using a two-step growth process, in which a GaN buffer is grown at relatively low temperatures and the rest of the film is grown at higher temperatures. This method of film growth was shown to lead to good single-crystalline β-GaN and to promote lateral growth resulting in smooth surface morphology. The full width at half-maximum of the x-ray rocking curve in the best case was found to be 60 min. Optical-absorption measurements indicate that the band gap of β-GaN is 3.2 eV and the index of the refraction below the absorption edge is 2.5. Conductivity measurements indicate that the films may have a carrier concentration below 1017 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350642
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  • 3
    Electronic Resource
    Electronic Resource
    Locking the cavity of a pulsed periodically poled lithium niobate optical parametric oscillator to the wavelength of a continuous-wave injection seeder by an "intensity-dip" method (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 3203-3213 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Injection seeding by a single-mode continuous-wave (cw) laser provides a convenient way to achieve narrowband tunable operation of a laser with a broad spectral gain profile, or of an optical parametric oscillator (OPO). Continuous single-mode tunability of the laser or OPO output usually requires the length of the optical cavity to be controlled as the injection-seeding wavelength is scanned. We report a novel variant on established methods of locking the optical cavity length to the seed wavelength. Our approach takes advantage of the resonance properties of an optical cavity. When the cavity is in resonance with the cw seed radiation, the total intensity of that radiation reflected off the cavity displays a pronounced dip; this intensity dip can be used as a locking signal to reset the cavity length piezoelectrically during each interval between the pump pulses that excite the laser or OPO. Our active cavity-locking scheme is realized in the case of a ring-cavity OPO, incorporating periodically poled lithium niobate (PPLN), pumped at 1.064 μm by a single-mode pulsed Nd:yttrium–aluminum–garnet laser and injection-seeded at its signal wavelength by a 1.55 μm single-mode tunable diode laser. The coherent infrared output of this injection-seeded PPLN OPO is shown to be continuously tunable, with an optical bandwidth of ∼130 MHz (0.0045 cm−1) and excellent spatial beam quality. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149895
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  • 4
    Electronic Resource
    Electronic Resource
    Measurement of low energy ion tracks in CR-39 plastic with an atomic force microscope (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 4575-4582 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We demonstrate that an atomic force microscope allows one to measure the detailed geometry of etch pits due to heavy ions with kinetic energies of 1−10 keV/amu at small distance scales registered in the nuclear track detector CR-39 plastic. With a typical range of a few hundred nm and an etch pit depth on the order of a few tens of nm, these ion tracks cannot be measured using conventional methods. With the technique developed in this work one is able to study the response of CR-39 plastic to particles at low ionization rates by precise measurements of low energy ion tracks. Among other applications, of particular interest is to explore the response of CR-39 in the regime in which nuclear stopping is comparable to electronic stopping. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145291
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  • 5
    Electronic Resource
    Electronic Resource
    Electronic conductivity of hydrogenated nanocrystalline silicon films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3945-3948 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A heteroquantum-dots (HQD) model for hydrogenated nanocrystalline silicon films (nc-Si:H) is proposed. The main features of our model are as follows. (i) the nanocrystalline grains and the amorphous counterparts in which they are embedded have very different band gap and band structures. As a result, they form heterojunctionlike structures in the interface regions, where the band offset effects dramatically reduce the activation energy and the grains act like quantum dots. (ii) In the presence of an external field, the activated electrons in the quantum dots conduct via quantum tunneling through the interface barriers. By means of the HQD model, we have identified the conduction of nc-Si:H as a thermal-assisted tunneling process. Our results show that there are two distinct regimes for the conductivity of nc-Si:H: (i) the low-temperature regime, where there is a simple activation energy ΔE; (ii) the high-temperature regime, where ΔE is effectively enhanced by the temperature effect of the electronic tunneling in the nanoscale particles. The theory is in good agreement with the experiments. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359914
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  • 6
    Electronic Resource
    Electronic Resource
    Phonon mode study of Si nanocrystals using micro-Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6705-6708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First-order Raman spectra of hydrogenated nanocrystalline silicon (nc:Si:H) films show unexpected features in their optical vibrational modes for crystallites with sizes ranging from 2 to 6 nm. Two size-dependent spectral regions, one with the stronger intensity peaking at 505–509 cm−1 and another a shoulder-like band between 512 and 517 cm−1, are clearly identified using a detailed line-shape analysis and the strong phonon confinement model. The strong size dependence of the relative integrated intensities of the two bands suggests that the modification of the vibrational spectra can be attributed to an effect induced by the atomic vibrations from the near-surface region of the nanocrystals. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360494
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  • 7
    Electronic Resource
    Electronic Resource
    Roughness dependent magnetic hysteresis of a few monolayer thick Fe films on Au(001) : The 6th joint magnetism and magnetic materials (MMM)-intermag conference (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 6446-6448 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied quantitatively the surface and interface roughness of Fe films in a few monolayer regime on an Au(001) surface using the high-resolution low-energy electron diffraction technique. The hysteresis loops of those films were also measured in situ by the surface magneto-optical kerr effect technique. A correlation between the shape of hysteresis loops and the roughness of films was observed. The hysteresis loops are consistently squarelike for films with a two-dimensional (2D) smooth structure. For films with isolated three-dimensional (3D) islands structure, the hysteresis loops are typically stripelike. For films with a combination of 2D/3D structure, the loop shape is squarelike for longitudinal loops and stripelike for polar loops.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358249
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  • 8
    Electronic Resource
    Electronic Resource
    Visible light emission from thin films containing Si, O, N, and H (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4020-4030 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication, chemical, optical, and photoluminescence characterization of amorphous silicon-rich oxynitride (SiOxNy:H) thin films by plasma-enhanced chemical-vapor deposition. The film compositions were followed by changes in the refractive index. X-ray photoelectron and Fourier transform infrared spectroscopy indicate that the chemical composition is dominated by silicon suboxide bonding with N present as a significant impurity. A broad tunable photoluminescence (PL) emission is visible at room temperature with a quantum efficiency of 0.011% at peak energies to 3.15 eV. The radiative lifetimes are less than 10 ns, and there is nearly no temperature dependence of the PL intensity down to 80 K. Ex situ annealing at temperatures above 850 °C results in an increase in PL efficiency by nearly three orders of magnitude, and the PL intensity is independent of the annealing ambient. The PL results are remarkably similar to literature results in oxidized porous silicon and oxidized nanocrystalline Si thin films, and suggest that the radiative center is due to the defect structure in the silicon suboxide moiety. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359925
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  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of large arrays of micron-scale magnetic features by selective area organometallic chemical vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1867-1871 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that it is possible to deposit a wide range of magnetic features, using photoassisted selective area organometallic chemical vapor deposition. Large arrays of identical micron-scale Ni features were deposited on a Si(111) wafer by this method. Their magnetic properties were studied by alternating gradient force magnetometry as well as magnetic force microscopy. Our morphological and magnetic measurements show that the structures are spatially well defined, and the magnetic properties are related to the structural shapes of the features. This method can be adapted to the fabrication of smaller-scale magnetic and electronic devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362999
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  • 10
    Electronic Resource
    Electronic Resource
    Growth and magnetic dynamic scaling of ultrathin ferromagnetic films: Fe/Au(001) : 38th Annual Conference on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5580-5582 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dynamic responses of the magnetic hysteresis of a few monolayer thick smooth Fe films on a Au(001) surface were measured by the surface magneto-optic Kerr effect technique. The Fe films were prepared by molecular beam epitaxy technique and their growth and structures were characterized in situ by high resolution low energy electron diffraction with angular profile measurement. The shape of the hysteresis loop changes with the frequency Ω and the amplitude H0 of the applied periodic magnetic field. Over a range of frequency (〈225 Hz) at a fixed amplitude and at room temperature, the area of the hysteresis loops follows a scaling form. The best fit of a scaling function to the frequency-dependent area gives exponents a=0.58±0.03 and b=0.24±0.02. For low values of frequency (〈25 Hz) and amplitude (〈400 Oe), the area of hysteresis loops measured at room temperature reduces to a power law A∝Ha0Ωb with a=0.59±0.07 and b=0.26±0.05. Our measured exponents and the scaling function are consistent with recent results of theory and Monte Carlo simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355647
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