ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have simultaneously determined the carrier concentration, mobility, and thickness of4H-SiC homo-epilayers with carrier concentration of 1016–1018 cm-3 from reflectance spectroscopy inthe wavenumber range of 20–2000 cm-1. The spectra at 20–100 cm-1 and at 80–2000 cm-1 weremeasured by using the terahertz time domain spectrometer (THz-TDS) and the Fourier-transforminfrared (FTIR) spectrometer, respectively. A modified classical dielectric function (MDF) modelwas employed for the curve fitting. We have compared the values of free carrier concentrationsestimated from the reflectance spectroscopy with the net doping concentrations obtained from C–Vmeasurements, and have discussed the validity of the electrical properties estimated from thereflectance spectroscopy
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.423.pdf
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