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  • 1
    Electronic Resource
    Electronic Resource
    Boron channeling implantations in silicon: Modeling of electronic stopping and damage accumulation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3697-3703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Channeling implantations of 20 keV boron into silicon have been performed with doses between 1013 and 1016 cm−2 in the [100], [110], and [211] direction, and parallel to a (111) plane. Simulations using an empirical electronic stopping model agree very well with the experimental results. The model has been obtained considering a large number of random and channeling implantations published in the literature. It contains a nonlocal and an impact parameter dependent part with the nonlocal fraction increasing with energy. Moreover, a computationally efficient damage accumulation model is presented which takes point defect recombination into account. It is found that due to interactions within a recoil cascade only 1/8 of the generated damage is stable, and that damage saturation takes place at a concentration of 4×1021 cm−3. Comparison of simulations and experiments indicates that displaced atoms reside on random positions rather than on tetrahedral interstitial sites in the silicon lattice. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358608
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization of buried K-fulleride layers formed by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1029-1033 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The formation of buried K-fulleride layers by implantation of 30 keV K+ into C60 films at an implant temperature of 300 °C has been studied as a function of dose ranging from 1×1016 to 1×1017 cm−2. After implantation K depth profiles were measured by secondary-ion-mass spectrometry and Rutherford backscattering spectrometry. Phase characterization was done by Raman scattering and grazing-angle x-ray diffraction. Within the range of the implanted ions a transformation of the fullerene molecules to amorphous carbon (a-C) was found; however, due to the elevated implant temperature of 300 °C most of the K diffuses into the depth where doping of the undestroyed film occurs. The shape of the observed K profiles depends on the dose. A local maximum of K observed right underneath the a-C layer tends to saturate at a value of about 2×1021 cm−3 for high implant doses. Both Raman scattering and x-ray diffraction strongly indicate the existence of K3C60 regions in the implanted films. The buried K-fulleride layers are stable on air due to a passivation effect of the a-C surface layer. The formation of the K-fulleride is discussed on the basis of the phase diagram for the K-C60 system and various thermodynamic processes such as segregation, phase formation, and diffusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358961
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  • 3
    Electronic Resource
    Electronic Resource
    Laser-beam heating and high-temperature luminescence of CdTe (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 369-373 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-temperature luminescence excited by a cw Kr-ion laser beam was used as a probe to measure the temperature of CdTe inside of the laser spot. The luminescence was first studied with low-power laser excitation on externally oven-heated CdTe. The results were then used as a standard for the temperature determination during laser-beam heating. It was found that the lattice temperature can be determined very accurately from the slope on the high-energy side of the luminescence spectrum. The maximum temperature inside the laser spot was measured as a function of the laser power. The results are in good agreement with theoretical calculations of cw laser heating in CdTe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339806
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  • 4
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2252-2256 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dislocated Si, SiGe, SiC, and SiGeC n-type heterostructures, grown by molecular beam epitaxy, were characterized by capacitance–voltage profiling and deep-level transient spectroscopy. Exclusively dislocation-related defects were found in the different layers, which correspond to the well-known defects found in plastically deformed silicon. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1389762
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  • 5
    Electronic Resource
    Electronic Resource
    Temperature dependence of the picosecond carrier relaxation in silicon-irradiated silicon-on-sapphire films (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1850-1855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of the free-carrier relaxation in ion-irradiated silicon-on-sapphire films has been investigated by picosecond photoconductivity measurements in the temperature range 90–295 K. The relaxation time of the photoconductivity decreases markedly with decreasing temperature in samples irradiated with small doses (〈1014 cm−2) of Si ions, whereas nearly amorphized samples show no temperature dependence. This behavior is well described within a multiple-trapping model taking into account structural defects that are built in during the evaporation of the films as well as introduced by the ion irradation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339568
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  • 6
    Electronic Resource
    Electronic Resource
    Defect levels in H+-, D+-, and He+-bombarded silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2167-2173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect levels produced by H+, D+, and He+ bombardment of silicon with different phosphorus doping and oxygen content were investigated using transient capacitance spectroscopy. After He+ implantation only pure damage defect levels occur, whereas after H+ and D+ implantation additional hydrogen-related defects are observed. For vacancy-related defects both the peak concentration and the halfwidth of the profiles depend only on the Fermi energy. The profiles were found to be broader than the theoretical vacancy distribution. The broadening which increases with decreasing doping level is explained by a model based on electric-field-enhanced diffusion. The production behavior of the defects shows a linear dependence of the sheet concentration on the ion dose for vacancy-related defects and a quadratic dependence for the hydrogen related defect E(0.30). This defect is tentatively identified as the (H-V) pair.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351606
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  • 7
    Electronic Resource
    Electronic Resource
    1.5 μm infrared photoluminescence phenomena in Er-doped porous silicon (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 537-539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We analyze the photoluminescence (PL) in nanoporous Si (po-Si) doped with Er by electrochemical deposition and by spin-on doping. Two kinds of optically active Er centers appear in electrochemically doped po-Si with the main sharp and intense lines at 1.548 and 1.539 μm, respectively. The features characteristic for the spin-on doping method are: intense dislocation-related PL at 1.53 μm and strong luminescent activity of the silica gel used for Er doping. High-temperature PL observed up to 360 K is attributed to Er centers incorporated in the silica-like matrix at the oxidized surface of electrochemically doped po-Si and in erbium-containing silica gel. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123179
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  • 8
    Electronic Resource
    Electronic Resource
    Direct excitation spectroscopy of Er centers in porous silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2975-2977 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report direct excitation of optically active Er centers in porous Si. Excitation spectroscopy performed close to the intracenter 4I15/2→4I11/2 and 4I15/2→4I9/2 transitions of Er3+ (4f11) ions allows us to identify two kinds of Er centers in porous Si: (i) Er diffused into porous nanograins with lower than cubic symmetry and (ii) Er centers incorporated in an amorphous silicalike matrix. The latter show much weaker thermal quenching of the Er3+ emission which decreases only by a factor of eight when the temperature is increased from 4.2 K up to 360 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120234
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  • 9
    Electronic Resource
    Electronic Resource
    On the environment of optically active Er in Si-electroluminescence devices (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 809-811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report sharp, atomlike electroluminescence spectra close to 1.54 μm from a low-dose (3.5×1018 cm−3) erbium-implanted silicon light-emitting diode operating under forward bias. The well-resolved Stark splitting identifies the isolated interstitial Er with cubic site symmetry as the source. The full width at half maximum of the most intense line is 0.5 nm. A comparison with a highly Er (5×1019 cm−3) and O (1×1020 cm−3) doped diode with a high doping gradient grown by molecular beam epitaxy and with Er-implanted silica is given with respect to fine structure and thermal quenching. The room-temperature emission of the highly Er and O doped diode is ascribed to Er containing silica precipitates within the c-Si matrix. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120900
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical properties of Si1−xCx alloys and modulation doped Si/Si1−xCx/Si structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3933-3935 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report electrical properties of undoped and Sb-doped Si1−xCx alloys grown by molecular beam epitaxy. Nominally undoped alloy layers exhibit electron background levels of 4×1016 cm−3 with a mobility above 30 000 cm2/V s at low temperatures. The layers can be doped with Sb at low growth temperatures, and the carrier concentrations and mobilities obtained are comparable to similarly doped Si layers. Modulation-doped Si/Si1−xCx/Si structures with the modulation doping in the Si layer close to the surface exhibit enhanced electron mobilities with peak values of about 10 000 cm2/V s, indicating that Si1−xCx strained on a silicon substrate forms an electron channel. From the saturation carrier concentration at low temperatures, the electron barrier between Si and Si0.98C0.02 is estimated to be about 150 meV. In lightly doped channel structures carrier freeze-out at low temperatures is observed, indicating a relatively high defect density in the channel. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114409
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