Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5604-5607 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal quenching mechanism of Yb intra-4f-shell luminescence were clarified by studying the temperature dependences of electrical and optical properties of Yb-doped InP samples. The quenching mechanism which depends on shallow donor concentration was found by comparing temperature dependences of Yb 4f-shell luminescence and free-carrier concentration. This mechanism is a localized Auger effect and is efficient below about 70 K in samples having a larger donor concentration than Yb concentration. At higher temperatures, another quenching mechanism was found to be efficient which does not depend on donor concentration. This quenching of Yb intra-4f-shell luminescence is accompanied by some increase of band-edge related luminescence. This phenomenon is explained by the energy back-transfer mechanism from the excited Yb 4f-shell to the InP host. Although an importance of the free-carrier Auger effect has been suggested in conducting materials, we propose that above two mechanisms dominate the quenching of the Yb 4f-shell luminescence in InP.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3390-3393 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optical and electrical properties of ytterbium-doped GaAs are investigated. The samples are grown by low-pressure metalorganic chemical vapor deposition using tris-cyclopentadienyl ytterbium as the ytterbium doping source. Yb concentrations in the GaAs epitaxial layers, which were measured by secondary ion mass spectroscopy, are well controlled by the source temperature up to 1.4×1019 cm−3, but GaAs:Yb samples do not show Yb intra-4f-shell photoluminescence. Hall effect and deep-level transient spectroscopy measurements reveal that the Yb doping forms deep electron traps or acceptor levels. The depth of such levels is likely to be responsible for the absence of Yb 4f photoluminescence in GaAs:Yb, in contrast to the strong Yb luminescence observed in InP:Yb.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1979-1982 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To investigate the effects of oxygen codoping on Er luminescence centers in GaAs, we grew Er-doped GaAs by low-pressure metalorganic chemical vapor deposition (MOCVD) and measured the photoluminescence spectrum due to the intra-4f-shell transition of Er. The spectrum of a sample grown in a pure hydrogen atmosphere was complicated, showing many lines and bands. The spectrum of a sample grown in a hydrogen atmosphere containing 0.2 ppm oxygen, on the other hand, was simple and had few lines. The spectrum of the oxygen-codoped sample showed higher peak intensities as well as higher integrated luminescence intensity in the 1.5–1.6 μm region. Secondary-ion mass spectroscopy revealed that the oxygen-codoped sample had a higher concentration of oxygen, indicating the formation of an Er-O complex center. One kind of optically active efficient Er-O complex luminescence center can, therefore, be selectively formed under suitable MOCVD growth conditions.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7288-7295 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The energy transfer mechanism between an Yb 4f shell and an InP host was investigated, assuming that a nonradiative multiphonon process assists the energy transfer. The values of the energy involved in the energy transfer were determined from the results of optical and electrical experiments. Rate equations were solved to obtain the temperature dependence of the Yb intra-4f-shell luminescence decay time. The calculated results and the experimentally obtained temperature dependence agree well. The calculated temperature dependence of the Yb intra-4f-shell luminescence intensity also agrees with the experimental measurements. These results strongly suggest that phonon absorption and emission compensate the energy mismatch in the energy transfer processes. The calculations also indicate that the thermal quenching phenomenon is mainly determined by the energy mismatch between the recombination energy of an electron and a hole and the Yb 4f-shell energy between the excited and ground states. On the basis of the above formulation, the Yb intra-4f-shell luminescence intensity under hydrostatic pressure was also investigated theoretically and compared with experimental results. The 4f-shell luminescence recovery at elevated temperature under hydrostatic pressure was qualitatively explained in the framework of the present model. The characteristic behavior of the thermal quenching in other rare-earth doped semiconductors could also be explained qualitatively assuming that the energy transfer mechanism is similar to the one for InP:Yb. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5614-5618 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-doped GaAs shows a sharp and simple intra-4f-shell luminescence spectrum of Er3+ ions under host photoexcitation, when the crystal is grown with deliberate oxygen codoping by metalorganic chemical-vapor deposition. Photoluminescence-excitation measurements by direct intra-4f-shell excitation, however, revealed that there are many kinds of Er3+ centers in the same crystal. To clarify the differences between these Er centers, photoluminescence was measured under both host photoexcitation and direct intra-4f-shell photoexcitation. It was found that there are three types of Er centers with distinctly different characteristics. The first type of Er center shows a sharp and simple photoluminescence spectrum with a high intensity under host photoexcitation. This center had been assigned as an Er atom coupled with two oxygen atoms (ErGa–2O center). The second type of Er center show sharp and simple spectra but only under direct intra-4f-shell photoexcitation and not under host photoexcitation. In a sample with Er concentration of 1.4×1018 cm−3, several such centers with distinctly different atomic configurations were found at substantial concentrations, probably exceeding that of the ErGa–2O center. As there is no intra-4f-shell luminescence for this type of center under host photoexcitation, no energy transfer path exists between the host and the 4f shells of this type of Er center. The third type of Er center shows complicated spectra even under intra-4f-shell photoexcitation with a specific photon energy. Analysis of photoluminescence spectra from this type of Er center revealed evidence of energy migration among Er3+ ions, suggesting that Er-rich aggregates are the origin of this type of PL spectra. Under host photoexcitation, this type of Er center shows luminescence but with a much lower intensity than the ErGa–2O center. The luminescence from Er centers similar to the third type probably is dominant in the PL spectrum of Er-doped GaAs grown without deliberate oxygen codoping, which does not contain an appreciable concentration of the ErGa–2O centers. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4330-4334 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have applied a multiphonon-assisted energy transfer model, which has been verified for the Yb-doped InP system, to Er-doped GaAs, Nd-doped GaP, and Nd-doped GaAs. By applying this model, the temperature dependence of the decay time of the 4f-shell luminescence can be calculated using two parameters. One parameter is the energy transfer probability between the rare-earth 4f shell and the semiconductor host, and the other is the energy which has to be compensated for in the energy transfer processes. The values of these two parameters were determined by fitting the calculated temperature dependence to the experimentally obtained results. The calculated temperature dependences fit with the experimental results well, showing that the energy transfer mechanism in these materials is similar to that in InP:Yb. The estimated values of energy which have to be compensated for enable us to estimate the energy level positions responsible for the rare-earth intra-4f-shell luminescence. The values of the transition matrix elements obtained by the fitting were rather large, suggesting that the energy transfer between the rare-earth 4f shell and the semiconductor host is efficient in spite of the fact that it is a phonon-assisted process. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3261-3266 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band-edge-related photoluminescence in Yb-doped InP was investigated by solving rate equations. For InP:Yb, two characteristic properties have been observed in the band-edge-related luminescence. One is that the decay curve of the band-edge-related luminescence has a slowly decaying component above about 100 K, which has not been observed in undoped InP. The other is that the luminesce intensity shows an increase at around 120 K, although that for undoped InP monotonically decreases as temperature increases. These two properties were investigated based on a proposed model of energy transfer between the Yb 4f shell and the InP–host electrical state. In the model, it is assumed that a nonradiative multiphonon transition process assists the energy transfer. We have shown, in a previous article, that the temperature dependence of the decay time and of the intensity of the Yb 4f shell luminescence can be explained by using this assumption. In this article, we calculated the band-edge-related luminescence properties under the same assumption. Good agreement was obtained between the calculated and experimental results. Thus, the experimentally observed characteristic properties in the band-edge-related luminescence are explained by the energy backtransfer from the excited Yb 4f shell to the host electronic state. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2800-2805 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the temperature dependence of erbium (Er) 4f-shell luminescence decay time and intensity in silicon based on a multiphonon-assisted energy transfer model, which has been verified for the Yb-doped InP system and has already been successfully applied to various rare-earth doped III–V semiconductors. The temperature dependence of the decay time of Er 4f-shell luminescence was calculated using two fitting parameters: the depth of a trap level related to the 4f-shell luminescence and the energy transfer probability between the Er 4f shell and the electronic state of the silicon host. For Si:Er codoped with oxygen and Si:Er codoped with nitrogen, the calculated temperature dependence was compared with the experimentally observed temperature dependence. A reasonably good fit was obtained between the calculated results and the experimental results, suggesting that the Er 4f-shell luminescence is caused by the multiphonon-assisted energy transfer. The estimated energy transfer probability for Si:Er,N is larger than that for Si:Er,O, suggesting a stronger interaction between the Er 4f shell and the Si host in Si:Er,N than in Si:Er,O. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 2412-2415 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Theoretical and experimental studies of electron mobility and compensation ratio in n-type InP are reported. From far-infrared magnetoabsorption measurements, compensation ratios of nine epitaxial samples are determined experimentally. Electron mobility is calculated by considering all essential scattering processes and by taking into account the compensation effect. By comparing the theoretical results with the experiments, it is found that the appropriate deformation potential and piezoelectric constant values for InP are 6.5 eV and 0.01, respectively. A new electron mobility and carrier concentration relationship, which can be used to determine the compensation ratio of high-purity n-type InP, is proposed.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1074-1076 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Er-doped GaAs has been grown by migration-enhanced epitaxy. The samples were grown at 300, 400, and 500 °C. Secondary ion mass spectroscopy measurements showed that the Er concentration in the grown epitaxial layer does not depend on the growth temperature between 300 and 500 °C. All samples showed luminescence due to the Er intra-4f-shell transition from the 4I13/2 excited state to the 4I15/2 ground state, but the spectra change drastically when the growth temperature is increased from 300 °C to 400 or 500 °C. The photoluminescence spectra of the samples grown above 400 °C are simpler than that of the sample grown at 300 °C. The spectrum of the sample grown at 300 °C became broad after annealing, whereas the spectra of the samples grown at 400 °C and above showed only changes in the relative intensity of the main luminescence lines. Some thermally stable Er luminescence centers seem to be preferentially formed at 400 and 500 °C.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...