ZIB

Treffer pro Seite

Treffer 1 - 1 | 1 Treffer

Alles auswählen Exportieren

Digitale Medien

Enhancement of the quantum efficiency and stability of electroluminescence from porous silicon by anodic passivation (1998)

Gelloz, B. ; Nakagawa, T. ; Koshida, N.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 2021-2023

zur Merkliste hinzufügen auf der Merkliste

Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The use of anodic oxidation as a post-treatment of porous silicon has been investigated to enhance the external quantum efficiency of electroluminescence from a device based on a thin transparent indium tin oxide contact on porosified n+-type silicon. Enhancement in external quantum efficiency of three orders of magnitude has been obtained. We report here an external quantum efficiency of 0.21%. The treatment also greatly improves the stability of the device. Results can be explained by the fact that anodic oxidation considerably reduces leakage current flowing via nonconfined silicon. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.122355

Bibliothek	Standort	Signatur	Band/Heft/Jahr	Verfügbarkeit

Andere fanden auch interessant ...

Artikel (Nationallizenzen)

Volltext

Treffer 1 - 1 | 1 Treffer