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Digitale Medien

Structural characterization of nanometer SiC films grown on Si (1993)

Li, J. P. ; Steckl, A. J. ; Golecki, I. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 62 (1993), S. 3135-3137

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Continuous, ultrathin silicon carbide (SiC) films of less than 10 nm have been grown on Si by rapid thermal chemical vapor deposition carbonization with high propane flow rates at 1100–1300 °C. X-ray and electron diffraction techniques indicated a monocrystalline structure for these nanometer-scale films. High-resolution transmission electron microscopy reveals that five SiC planes are aligned with four Si planes at the SiC/Si interface. The Fourier transform infrared spectrum of the SiC films exhibits the characteristic Si-C absorption peak at around 800 cm−1, with a FWHM of 45 cm−1.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.109106

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