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Digitale Medien

In situ electrical-field-induced growth and properties of Bi3TiNbO9 ferroelectric thin films (2001)

Yang, B. ; Zhang, X. J. ; Zhang, S. T. ; [weitere]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 79 (2001), S. 4559-4561

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Details

ISSN: 1077-3118

Quelle: AIP Digital Archive

Thema: Physik

Notizen: With Bi3TiNbO9 (BTN) ferroelectric samples, in situ electrical-field-induced growth of ferroelectric thin films was demonstrated to control the films' microstructure and manipulate their ferroelectric properties. BTN films on Ti/SiO2/Si substrates were grown at a relatively low temperature (650 °C) with a biased electrical field during pulsed-laser deposition. The (001) orientation of the films, which makes no contribution to their polarization, was effectively reduced by the in situ electrical field of strength of 70 V/cm. This results in a large increase of remnant polarization from 1.1 to 6.2 μC/cm2, and reduction of the coercive field from 70 to 50 kV/cm, comparing the films grown freely under the same condition. Furthermore, the films showed an excellent fatigue-free property of up to 1010 switching cycles. © 2001 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.1430023

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