Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 2442-2444
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Based on experimental studies of n-channel excimer-laser-annealed polycrystalline silicon thin-film transistors with gate ratio width/length varying from 0.5 to 2.5, we propose a reliable method to determine the threshold voltage Vt from linear extrapolation of the transconductance to zero. The results reveal that the determined values of Vt are independent of the device geometry and the applied drain voltage in the linear region, in contrast with the drain current linear extrapolation method. The values of Vt are correlated with the density of the total trap states derived from the subthreshold gate swing voltage. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126370
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