Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2381-2383
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaAs metal–semiconductor–metal photodetectors (MSM PDs) with a variety of nanoscale finger spacings and widths were fabricated using nanoimprint lithography (NIL). Compared with MSM-PDs fabricated using electron-beam lithography and photolithography, the MSM-PDs fabricated using NIL do not show observable degradation in the device characteristics if the imprinting pressures are kept at 600 psi or below, although they do degrade at higher pressures. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123858
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