Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2076-2078
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Ge implantation followed by high-temperature solid phase epitaxy was used to form a relaxed substrate, eliminating need for the growth of relaxed Si1−xGex layers. Upon this film, a 2000 Å buffer layer of Si0.85Ge0.15 followed by a 200 Å strained Si layer was grown by ultrahigh-vacuum chemical vapor deposition. For comparison, unstrained Si epitaxial films and a 2000 Å thick film of Si0.85Ge0.15 (on unimplanted Si) followed by 200 Å of Si were used. n-channel metal–oxide–semiconductor transistors were fabricated and their dc characteristics were examined. Strained Si devices show a 17.5% higher peak linear μFE than control devices as a result of higher electron mobility in the strained Si channel. This work demonstrates a simple method for the formation of strained Si layers. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123762
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