ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A method for lowering the processing temperature of PbZr1−xTixO3 (PZT) films was developed utilizing a laser-assisted two-step process. In the first step, perovskite phase was initiated in the PZT films to a furnace anneal at low temperatures in the range of 470–550 °C, depending on the Zr/Ti ratio. Later, the films were laser annealed (using KrF excimer laser) at room temperature to grow the perovskite phase, and to improve microstructure and ferroelectric properties. It was found that this two-step process was very effective in producing excellent quality ferroelectric PZT films at low temperatures. It should be noted that although laser annealing of amorphous and/or pyrochlore films directly (one-step process) produced perovskite phase, the ferroelectric properties of these films, irrespective of the composition, were rather unattractive. Some possible reasons for the ineffectiveness of the one-step process were discussed. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.122334
