Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 2314-2316
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have demonstrated that boron nitride films deposited on silicon and tantalum can be etched in a hot filament environment with an input gas composition of 1% methane in hydrogen. Etching experiments were carried out at around 800 K on a tantalum foil and at somewhat higher temperatures on silicon substrates. If the etchant is atomic hydrogen or methyl radical, then we estimate etching efficiencies (atoms etched per collision) of ∼10−5 or 10−4 for these species, respectively. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115137
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