Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 3054-3055
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photoreflectance has been used to study the electronic behavior of the ambient (100) GaAs surface and its modification by etching in a Cl2/Ar plasma generated by an electron-cyclotron resonance (ECR) source. We observed two pinning positions for ambient (100) GaAs, with n-GaAs pinning near midgap and p-GaAs pinning near the valance band. ECR etching shifts the Fermi level of p-GaAs toward midgap, but has little effect on n-GaAs. The surface modification is most influenced by the rf power. Auger electron spectroscopy indicates that the etching increases As at the GaAs/oxide interface. We suggest that the Ga/As ratio controls the position of the Fermi level. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114275
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