ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
For 30 keV B implants in Si, doses above 1.5×1014 B/cm2 will lead to dislocation formation during a subsequent 900 °C anneal to make the B electrically active. Although dislocations are avoided for doses 〈1.5×1014 B/cm2, the B concentration is only ∼1×1019 B/cm3, a factor of 4–5 lower than the solid solubility of B in Si at 900 °C. Using multiple implant/anneal steps, we demonstrate here that implanted, electrically active B can be introduced up to the solid solubility limit while avoiding dislocation formation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109803