Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 846-848
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe the growth and characterization of the InAs/GaInSb superlattice on GaSb substrates. We present far-infrared (λ∼10 μm) photoabsorption and photoconductivity spectra which are in good agreement with theoretical predictions for the photoresponse of this spatially indirect superlattice. We report time-resolved photoconductivity measurements in which two response times are observed. We interpret the fast, 2 ns decay as resulting from electron-hole recombination via deep defect levels and the slow, 2 μs decay as resulting from recombination of a small fraction of the photogenerated minority carriers which become trapped at a defect site.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105255
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