ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Boron atoms are incorporated into (100)Si wafers by heating the substrates at 800 °C for 30 min in a (B2H6+H2) atmosphere and by subsequent rapid thermal annealing above 900 °C. Atomic and carrier-concentration profiles of boron-doped layers have been examined by a secondary-ion mass spectrometry and by differential Hall measurements, respectively. Experimental results have clearly shown that ultrashallow p+ layers, 300 A(ring) thick, with a surface carrier concentration of 7.26×1019/cm3 can be formed by diffusion of boron at 800 °C and by subsequent RTA at 100 °C.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105104