Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
53 (1988), S. 2389-2390
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the first successful room-temperature cw operations of a Ga0.25 In0.75 As0.5 P0.5 -InP buried ridge structure laser emitting at 1.3 μm grown by two-step low-pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100239
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