ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Buried heterostructure lasers fabricated using reactive ion etching for stripe definition and gas source molecular beam epitaxy for blocking layer regrowth are presented for the first time. The structure design includes, in particular, a nonselective epitaxial regrowth step as well as a III-V material lift-off. Preliminary results show continuous wave operation with threshold currents of 43 mA and maximum output power of 17 mW per facet. This process is, in particular, very well suited for integration purposes and high yield 2 in. wafer processing.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107408
Permalink