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Single heterostructures for optical transport experiments (1987)

Höpfel, R. A. ; Shah, J. ; Chang, T. Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 51 (1987), S. 1815-1817

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We introduce a new GaAs/AlxGa1−xAs single heterostructure, which allows local optical injection of a one-component confined plasma. The heterojunction is placed in the undoped region of a p-i-n structure, which provides a high built-in electric field for the separation of injected electrons and holes, as well as for the two-dimensional confinement of electrons. A time-of-flight measurement of the majority-electron drift velocity at room temperature is demonstrated.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.98532

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