Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 1314-1317
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A silicon–oxide layer was deposited by a low-pressure chemical vapor deposition technique at temperatures as low as 400 °C for gate dielectric material of the 4H-SiC metal–oxide–semiconductor (MOS) capacitors. Interfacial properties such as the amount of effective charge (Neff), interfacial oxide trapped density (Dit) and hot-carrier tolerance of the 4H-SiC(0001) MOS capacitors were evaluated by simultaneous C–V measurement as a dependence of a post-oxidation annealing (POA) at temperatures ranging from 1000 to 1200 °C. It was found that the POA temperature dependence of the Dit was different from that of the Neff. On the other hand, the POA dependence of hot-carrier tolerance was similar to that of the Dit. In consequence, those interfacial properties were sufficiently improved and became stable above the POA temperature of 1100 °C, which corresponds to the softening temperature of SiO2 bulk. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1428099
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