Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 2157-2159
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Pb(Zr0.5Ti0.5)O3 thin films 25 nm in thickness were grown on LaNiO3/Pt/Ti buffered Si substrates at 600 °C by metalorganic chemical vapor deposition. P–E studies showed a remanent polarization value of 8 μC/cm2 with a coercive field of 200 kV/cm. In polarization fatigue studies, these films only showed slight degradation in remanent polarization up to 4×108 cycles (±3 V oscillation) before breakdown. Moreover, the effect of space charge on the C–V behavior of these films was illustrated I–V characteristics of these films were also described. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1305824
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