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Physical properties of osmium doped tin oxide thin films (1998)

Rella, R. ; Siciliano, P. ; Vasanelli, L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 2369-2371

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The sol-gel process has been used to prepare osmium doped tin oxide thin films. The energy gap and refractive index were evaluated from optical measurements. Electrical characterization has been performed in a controlled atmosphere in order to investigate the influence of methane on the electrical conductance. New results have been obtained that make tin oxide doped with osmium a very interesting material for fabrication of low power consumption sensors for methane detection. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.366982

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