Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 260-266
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The hole mobility of Be-doped ( ∼ 2 × 1017 cm−3) AlxGa1−xAs, for x=0–1, is analyzed both theoretically and experimentally. Alloy scattering is very important, and in fact reduces the hole mobility from 150 to less than 90 cm2/V s at x=0.5. The main parameter in the alloy scattering formulation, the alloy potential Eal, is found to be about 0.5 eV for p-type AlxGa1−xAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350752
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