Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 3386-3389
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Detailed low-temperature optical characterization of screen-printed CdTe is presented. Photoluminescence and excitation spectroscopy demonstrate the existence of a new defect center systematically found in all the deposited layers. A possible explanation is based on a local mode induced by the defect but the experimental data are also very similar to those presented by Monemar et al. [Phys. Rev. B 25, 7719 (1982)] for two complexes in GaP:Cu. including the characteristic orange luminescence (COL) center, and for an Ag-related complex in ZnTe:Ag. The growth process as well as the optical results lead to an identification of the defect with an isoelectronic complex involving Cl ([VCd 2ClTe]).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346342
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