Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 862-864
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The rise in temperature due to Joule-induced heating within undoped polycrystalline silicon resistors is estimated quantitatively when a moderately high electric field is applied. From the experimental results, a phenomenological expression of the rise in temperature in terms of the applied electric field, the geometrical dimensions of the resistor bar, and the resistivity of the polycrystalline silicon thin film is obtained.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346770
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