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Experimental study of self-heating in undoped polycrystalline silicon thin films (1990)

Dimitriadis, C. A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 862-864

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The rise in temperature due to Joule-induced heating within undoped polycrystalline silicon resistors is estimated quantitatively when a moderately high electric field is applied. From the experimental results, a phenomenological expression of the rise in temperature in terms of the applied electric field, the geometrical dimensions of the resistor bar, and the resistivity of the polycrystalline silicon thin film is obtained.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346770

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