ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Semiconductor-insulator-semiconductor n+-SI-n+ InP structures have been used effectively for current confinement in channeled substrate buried heterostructure lasers. The semi-insulating (SI) layer is produced by the implantation of Fe into a n+-InP substrate. The properties of this implanted layer and the role of the deep acceptor levels of Fe in controlling the transport properties of SI-InP are studied in this and the following paper (Part II). The principle of compensation is discussed and applied to the implanted layer, and current injection phenomena are described, emphasizing the important role of space-charge-limited (SCL) current. The electrical characteristics of the n+-SI-n+ structures reveal the classic trap-controlled SCL current behavior at low temperatures with a trap-filled limit achieved at 1.2 V, and an approximately trap-free SCL current at room temperature.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336028
