ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The properties of semi-insulating (SI) Fe-implanted InP are studied via the electrical and optical properties of p+-SI-n+ InP diodes. The current-voltage-temperature characteristics reveal a rich variety of transport processes in which the deep levels of Fe play a prominent role, including tunneling and field-assisted thermionic emission from these levels, and space-charge-limited double-injection current effects. From the analysis of these currents, different experimental estimates of the position of the deep levels have been obtained. These are compared with a direct experimental determination of their position from the measurement of the photocurrent spectra of the p+-SI-n+ diodes. These results establish the position of the iron acceptors at a level lying between 0.60–0.65 eV below the conduction band minimum. Capacitance spectroscopy of the p+-SI-n+ diodes revealed additional defect levels and carrier freeze-out effects at low temperatures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.336029
