ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work ion-implanted p+/n diodes have been used as minimum ionizing particle(MIP) detectors. The diode structure is based on a 0.45 $m deep, NA = 4×1019 cm-3 doped p+ anode,ion implanted in an n-type epilayer with thickness equal to 55 $m and nominal donor doping ND= 2×1014 cm-3. The diode breakdown voltages were above 1000V. At 1000V reverse bias the diodeleakage current was of the order of 1 nA. The punch through depletion voltage was nearing therange 220-250 V. The charge collection efficiency to minimum ionizing particle was investigated bya 90Sr β source. The pulse height spectrum was measured as a function of the reverse voltage in therange 0-605 V. At each bias point the signal was stable and reproducible, showing the absence ofpolarization effects. At 220 V the collected charge was 2970 e- and saturated at 3150 e- near 350 V.At the moment, this is the highest collected charge for SiC detectors. At bias voltages over 100Vthe spectrum was found to consist of two peaks clearly separated. Around 250 V the signalsaturates, in agreement with CV results
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1469.pdf
