ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
To elucidate the origin of giant step bunching on 4˚ off-axis 4H-SiC (0001) faces, wecarried out hydrogen etching and epitaxial growth under various conditions. We found that giant stepbunching occurs during hydrogen etching and epitaxial growth at extremely low or high C/Si ratios,i.e., with an excessive supply of SiH4 or C3H8. From these results, we have proposed that the originsof giant step bunching are asymmetry in the step kinetics in etching and Si or C cluster generation onterraces during growth
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.473.pdf