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Digitale Medien

Photoluminescence measurements of complex defects in Si-doped Al0.3Ga0.7As (1994)

de Paula, Ana M. ; Medeiros-Ribeiro, G. ; de Oliveira, A. G.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 76 (1994), S. 8051-8054

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: The optical properties of a Si-doped Al0.3Ga0.7As alloy are studied as a function of the Si dopant concentration by means of photoluminescence measurements. The photoluminescence spectra show peaks due to electron Si acceptors and Si-related complex-defects transitions, which we tentatively attribute to Si acceptor coupled to an As vacancy (SiAs-VAs) and Si donor coupled to a Ga(Al) vacancy (SiIII-VIII). We show that the importance of each of these defects to the alloy optical properties is strongly dependent on the growing parameters. Spectrum for a planar-doped sample also showing peaks related to Si complex defects is presented. © 1994 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.357875

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