ISSN:
0020-7608
Schlagwort(e):
Computational Chemistry and Molecular Modeling
;
Atomic, Molecular and Optical Physics
Quelle:
Wiley InterScience Backfile Collection 1832-2000
Thema:
Chemie und Pharmazie
Notizen:
Self-consistent electronic subband structure calculations of periodic n-type delta (δ)-doped layers in Si and GaAs are performed within the local density-functional approximation. The behavior of the energy levels, potential profiles, miniband occupancies, and Fermi level position with the variation of the dopant concentration ND and the spacing between the δ-layers ds is examined for Si δ-doping in GaAs and Sb δ-doping in Si. The physical properties of these δ-doping structures show a strong dependence on ds, reflecting a transition from isolated delta-wells to superlattices as ds decreases. The crossover involving the change from a two-dimensional to three-dimensional behavior is discussed for both kinds of systems. © 1994 John Wiley & Sons, Inc.
Zusätzliches Material:
2 Ill.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1002/qua.560520859
