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Optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures (1994)

Shen, W. Z. ; Tang, W. G. ; Shen, S. C. ; [et al.]

Springer

International journal of infrared and millimeter waves 15 (1994), S. 1809-1818

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ISSN: 1572-9559

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract We investigate the effects of spacer layer thickness on the optical and transport properties of the n-typeδ-doped pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As / GaAs structures. Aδ-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×1012 cm−2 at 77K with electron mobility of 6.4×103 cm2/Vs, 3.11×104 cm2/Vs, and 3.45×104 cm2/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF02096051

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