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Superconductor/ferroelectric epitaxial heterostructures for tunable microwave devices (1997)

Boikov, Yu. A. ; Ivanov, Z. G. ; Claeson, T.

Springer

Physics of the solid state 39 (1997), S. 195-199

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ISSN: 1063-7834

Source: Springer Online Journal Archives 1860-2000

Topics: Physics

Notes: Abstract The formation of epitaxial heterostructures including YBa2Cu3O7−δ and SrTiO3 thin films on R-plane sapphire substrates has been studied. The thin CeO2 layer and the CeO2/SrBi2Nb2O9 epitaxial bilayer served as buffers. The temperature dependence of the dielectric permittivity ɛ of the SrTiO3 film behaved in essentially different ways when incorporated in the YBa2Cu3O7−δ /SrTiO3/YBa2Cu3O7−δ and in Ag/SrTiO3/YBa2Cu3O7−δ capacitor structures. An external bias U b=±2.5 V applied to a plane-parallel YBa2Cu3O7−δ /SrTiO3/YBa2Cu3O7−δ capacitor structure (T〈100 K) reduced the ɛ of the SrTiO3 film to one half its original value.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1134/1.1129782

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