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  • 1
    Electronic Resource
    Electronic Resource
    Equilibrium configurations of partial misfit dislocations in thin-film heterosystems (1998)
    Springer
    Physics of the solid state 40 (1998), S. 1864-1869 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The energy characteristics of orthogonal rows of partial misfit dislocations with V-shaped stacking faults in thin-film heteroepitaxial systems are analyzed theoretically. It is shown that they should appear only in very thin epitaxial films of nanoscopic thickness and for high values of the mismatch exceeding a definite value. Under these conditions partial misfit dislocations associated with V-shaped stacking faults are typical elements of the defect structure of nanolayer heterosystems. For smaller mismatches and larger films thicknesses total misfit dislocations should form.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1130674
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