Electronic Resource
Springer
Physics of the solid state
40 (1998), S. 183-186
ISSN:
1063-7834
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract (001)YBa2Cu3O7−δ epitaxial films were prepared by laser ablation on $$(1\bar 102)Al_2 O_3 $$ surface. A thin (001)CeO2 or (111)CeO2 buffer layer was deposited between the substrate and the superconductor film to reduce their chemical interaction. In the initial stages of CeO2 buffer formation, its orientation depended strongly on the intensity of cerium ion interaction with oxygen. Epitaxial growth of (001)YBa2Cu3O7−δ films was achieved both on $$(001)CeO_2 //(1\bar 102)Al_2 O_3 $$ and $$(111)CeO_2 //(1\bar 102)Al_2 O_3 $$ . The T c temperature of epitaxial (001)YBa2Cu3O7−δ films was within 88–90 K, and the current J c at 77 K was in excess of 106 A/cm−2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1130267
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