ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Clustering of ultra-low-energy implanted boron in silicon during postimplantation annealing (1999)

Schroer, E. ; Privitera, V.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 74 (1999), S. 3996-3998

add to mindlist on the mindlist

Details

ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We report on the clustering behavior of ultra-low-energy (500 eV) implanted boron in silicon during the postimplantation activation annealing. The broadening of the boron concentration profile is found to be composed of a diffusing and a nondiffusing contribution. The nondiffusing part is attributed to clustered boron. The concentration of boron in clusters is found to be dependent on the annealing temperature and the annealing time. The amount of boron in clusters decreases with increasing annealing time. A dissolution time constant with an average activation energy of 2.3 eV is determined from this behavior. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.123239

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit