Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 3356-3358
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the synthesis of InAs quantum dots on (311)B InP substrates. It is found that the use of such high index surfaces allows the formation of a high density (5×1010 islands/cm2) of small InAs islands (diameter(approximate)350 Å) on InP. Moreover, a large improvement of the size uniformity is obtained in comparison with deposition on (100) surface. The standard height deviations are ±13% and ±50% for islands grown on (311)B and (100) surfaces, respectively. Then, we show that the modification of the As/P flux sequences, after the island formation, permits the control of the quantum dot emission wavelength. The achievement of quantum dots emitting at 1.55 μm at 300 K indicates that this method is promising for telecom device making. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123343
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
