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    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1287-1289 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) 〈27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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