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Selective carrier injection into V-groove quantum wires (1998)

Weman, H. ; Martinet, E. ; Rudra, A. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 73 (1998), S. 2959-2961

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: We have observed selective carrier injection into GaAs/AlGaAs V-groove quantum wires (QWRs) via self-ordered vertical quantum wells (VQWs). Room-temperature I–V characteristics of QWR diodes show a turn-on voltage lower by 0.2 V as compared with planar QW diodes, consistent with the band-gap reduction of 0.2 eV at the vertical QW. This selective injection results in narrow linewidth electroluminescence (∼5 nm at 300 K) emanating exclusively from the QWR from 10 K up to 300 K. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.122643

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